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| MUN5211DW1T1 Series Preferred Devices Dual Bias Resistor Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http://onsemi.com The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the MUN5211DW1T1 series, two BRT devices are housed in the SOT-363 package which is ideal for low power surface mount applications where board space is at a premium. (3) R1 Q1 (2) R2 (1) Q2 R2 (4) R1 (5) (6) * * * * Simplifies Circuit Design Reduces Board Space Reduces Component Count Available in 8 mm, 7 inch/3000 Unit Tape and Reel 6 1 MAXIMUM RATINGS (TA = 25C unless otherwise noted, common for Q1 and Q2) Rating Collector-Base Voltage Collector-Emitter Voltage Collector Current Symbol VCBO VCEO IC Value 50 50 100 Unit Vdc Vdc mAdc SOT-363 CASE 419B STYLE 1 MARKING DIAGRAM 6 XXd 1 XX = Specific Device Code d = Date Code = (See Page 2) THERMAL CHARACTERISTICS Characteristic (One Junction Heated) Total Device Dissipation TA = 25C Derate above 25C Thermal Resistance - Junction-to-Ambient Characteristic (Both Junctions Heated) Total Device Dissipation TA = 25C Derate above 25C Thermal Resistance - Junction-to-Ambient Thermal Resistance - Junction-to-Lead Junction and Storage Temperature 1. FR-4 @ Minimum Pad 2. FR-4 @ 1.0 x 1.0 inch Pad Symbol PD Max 187 (Note 1.) 256 (Note 2.) 1.5 (Note 1.) 2.0 (Note 2.) 670 (Note 1.) 490 (Note 2.) Max 250 (Note 1.) 385 (Note 2.) 2.0 (Note 1.) 3.0 (Note 2.) 493 (Note 1.) 325 (Note 2.) 188 (Note 1.) 208 (Note 2.) -55 to +150 Unit mW mW/C C/W RJA DEVICE MARKING INFORMATION Unit mW mW/C C/W C/W C Preferred devices are recommended choices for future use and best overall value. See specific marking information in the device marking table on page 2 of this data sheet. Symbol PD RJA RJL TJ, Tstg (c) Semiconductor Components Industries, LLC, 2003 1 December, 2003 - Rev. 5 Publication Order Number: MUN5211DW1T1/D MUN5211DW1T1 Series DEVICE MARKING AND RESISTOR VALUES Device MUN5211DW1T1 MUN5212DW1T1 MUN5213DW1T1 MUN5214DW1T1 MUN5215DW1T1 MUN5216DW1T1 MUN5230DW1T1 MUN5231DW1T1 MUN5232DW1T1 MUN5233DW1T1 MUN5234DW1T1 MUN5235DW1T1 MUN5236DW1T1 MUN5237DW1T1 Package SOT-363 SOT-363 SOT-363 SOT-363 SOT-363 SOT-363 SOT-363 SOT-363 SOT-363 SOT-363 SOT-363 SOT-363 SOT-363 SOT-363 Marking 7A 7B 7C 7D 7E 7F 7G 7H 7J 7K 7L 7M 7N 7P R1 (K) 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 2.2 100 47 R2 (K) 10 22 47 47 1.0 2.2 4.7 47 47 47 100 22 Shipping 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted, common for Q1 and Q2) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector-Base Cutoff Current (VCB = 50 V, IE = 0) Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0) MUN5211DW1T1 MUN5212DW1T1 MUN5213DW1T1 MUN5214DW1T1 MUN5215DW1T1 MUN5216DW1T1 MUN5230DW1T1 MUN5231DW1T1 MUN5232DW1T1 MUN5233DW1T1 MUN5234DW1T1 MUN5235DW1T1 MUN5236DW1T1 MUN5237DW1T1 ICBO ICEO IEBO - - - - - - - - - - - - - - - - 50 50 - - - - - - - - - - - - - - - - - - 100 500 0.5 0.2 0.1 0.2 0.9 1.9 4.3 2.3 1.5 0.18 0.13 0.2 0.05 0.13 - - nAdc nAdc mAdc Collector-Base Breakdown Voltage (IC = 10 A, IE = 0) Collector-Emitter Breakdown Voltage (Note 3.) (IC = 2.0 mA, IB = 0) 3. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0% V(BR)CBO V(BR)CEO Vdc Vdc http://onsemi.com 2 MUN5211DW1T1 Series ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted, common for Q1 and Q2) (Continued) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS (Note 4.) DC Current Gain (VCE = 10 V, IC = 5.0 mA) MUN5211DW1T1 MUN5212DW1T1 MUN5213DW1T1 MUN5214DW1T1 MUN5215DW1T1 MUN5216DW1T1 MUN5230DW1T1 MUN5231DW1T1 MUN5232DW1T1 MUN5233DW1T1 MUN5234DW1T1 MUN5235DW1T1 MUN5236DW1T1 MUN5237DW1T1 hFE 35 60 80 80 160 160 3.0 8.0 15 80 80 80 80 80 - 60 100 140 140 350 350 5.0 15 30 200 150 140 150 140 - - - - - - - - - - - - - - - 0.25 Vdc Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) (IC = 10 mA, IB = 5 mA) MUN5230DW1T1/MUN5231DW1T1 (IC = 10 mA, IB = 1 mA) MUN5215DW1T1/MUN5216DW1T1 MUN5232DW1T1/MUN5233DW1T1/MUN5234DW1T1 Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 k) MUN5211DW1T1 MUN5212DW1T1 MUN5214DW1T1 MUN5215DW1T1 MUN5216DW1T1 MUN5230DW1T1 MUN5231DW1T1 MUN5232DW1T1 MUN5233DW1T1 MUN5234DW1T1 MUN5235DW1T1 MUN5213DW1T1 MUN5236DW1T1 MUN5237DW1T1 VCE(sat) VOL - - - - - - - - - - - - - - VOH MUN5230DW1T1 MUN5215DW1T1 MUN5216DW1T1 MUN5233DW1T1 4.9 - - - - - - - - - - - - - - - 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 - Vdc (VCC = 5.0 V, VB = 3.5 V, RL = 1.0 k) (VCC = 5.0 V, VB = 5.5 V, RL = 1.0 k) (VCC = 5.0 V, VB = 4.0 V, RL = 1.0 k) Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 k) (VCC = 5.0 V, VB = 0.050 V, RL = 1.0 k) (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 k) Vdc 4. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0% http://onsemi.com 3 MUN5211DW1T1 Series ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted, common for Q1 and Q2) (Continued) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS (Note 5.) (Continued) Input Resistor MUN5211DW1T1 MUN5212DW1T1 MUN5213DW1T1 MUN5214DW1T1 MUN5215DW1T1 MUN5216DW1T1 MUN5230DW1T1 MUN5231DW1T1 MUN5232DW1T1 MUN5233DW1T1 MUN5234DW1T1 MUN5235DW1T1 MUN5236DW1T1 MUN5237DW1T1 R1 7.0 15.4 32.9 7.0 7.0 3.3 0.7 1.5 3.3 3.3 15.4 1.54 70 32.9 0.8 0.17 - 0.8 0.055 0.38 0.038 1.7 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 2.2 100 47 1.0 0.21 - 1.0 0.1 0.47 0.047 2.1 13 28.6 61.1 13 13 6.1 1.3 2.9 6.1 6.1 28.6 2.86 130 61.1 1.2 0.25 - 1.2 0.185 0.56 0.056 2.6 k Resistor Ratio MUN5211DW1T1/MUN5212DW1T1/ MUN5213DW1T1/MUN5236DW1T1 MUN5214DW1T1 MUN5215DW1T1/MUN5216DW1T1 MUN5230DW1T1/MUN5231DW1T1/MUN5232DW1T1 MUN5233DW1T1 MUN5234DW1T1 MUN5235DW1T1 MUN5237DW1T1 5. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0% R1/R2 ALL MUN5211DW1T1 SERIES DEVICES 300 PD, POWER DISSIPATION (mW) 250 200 150 100 50 0 -50 RJA = 833C/W 0 50 100 TA, AMBIENT TEMPERATURE (C) 150 Figure 1. Derating Curve http://onsemi.com 4 MUN5211DW1T1 Series TYPICAL ELECTRICAL CHARACTERISTICS -- MUN5211DW1T1 1 IC/IB = 10 TA = -25C 25C 0.1 75C 1000 hFE , DC CURRENT GAIN (NORMALIZED) VCE = 10 V TA = 75C 25C -25C VCE(sat) , COLLECTOR VOLTAGE (VOLTS) 100 0.01 0.001 0 20 40 IC, COLLECTOR CURRENT (mA) 50 10 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 2. VCE(sat) versus IC Figure 3. DC Current Gain 4 f = 1 MHz IE = 0 V TA = 25C 100 75C IC, COLLECTOR CURRENT (mA) 10 1 0.1 0.01 25C TA = -25C Cob , CAPACITANCE (pF) 3 2 1 VO = 5 V 0 1 2 3 4 5 6 7 Vin, INPUT VOLTAGE (VOLTS) 8 9 10 0 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 0.001 Figure 4. Output Capacitance Figure 5. Output Current versus Input Voltage 10 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) TA = -25C 25C 75C 1 0.1 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 6. Input Voltage versus Output Current http://onsemi.com 5 MUN5211DW1T1 Series TYPICAL ELECTRICAL CHARACTERISTICS -- MUN5212DW1T1 1 IC/IB = 10 TA = -25C 25C 75C 1000 hFE, DC CURRENT GAIN (NORMALIZED) VCE(sat) , COLLECTOR VOLTAGE (VOLTS) VCE = 10 V TA = 75C 25C -25C 0.1 100 0.01 0.001 0 20 IC, COLLECTOR CURRENT (mA) 40 50 10 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 7. VCE(sat) versus IC Figure 8. DC Current Gain 4 f = 1 MHz IE = 0 V TA = 25C 100 IC, COLLECTOR CURRENT (mA) 10 1 0.1 0.01 75C 25C TA = -25C Cob , CAPACITANCE (pF) 3 2 1 VO = 5 V 0 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 0.001 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) 8 10 Figure 9. Output Capacitance Figure 10. Output Current versus Input Voltage 100 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) TA = -25C 10 75C 25C 1 0.1 0 10 20 30 40 50 IC, COLLECTOR CURRENT (mA) Figure 11. Input Voltage versus Output Current http://onsemi.com 6 MUN5211DW1T1 Series TYPICAL ELECTRICAL CHARACTERISTICS -- MUN5213DW1T1 10 IC/IB = 10 1000 hFE , DC CURRENT GAIN (NORMALIZED) VCE(sat) , COLLECTOR VOLTAGE (VOLTS) VCE = 10 V TA = 75C 25C -25C 1 TA = -25C 0.1 25C 75C 100 0.01 0 20 40 IC, COLLECTOR CURRENT (mA) 50 10 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 12. VCE(sat) versus IC Figure 13. DC Current Gain 1 0.8 Cob , CAPACITANCE (pF) 0.6 0.4 0.2 0 IC, COLLECTOR CURRENT (mA) f = 1 MHz IE = 0 V TA = 25C 100 75C 10 1 0.1 25C TA = -25C 0.01 VO = 5 V 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) 8 10 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 0.001 Figure 14. Output Capacitance Figure 15. Output Current versus Input Voltage 100 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) TA = -25C 10 25C 75C 1 0.1 0 10 20 30 40 50 IC, COLLECTOR CURRENT (mA) Figure 16. Input Voltage versus Output Current http://onsemi.com 7 MUN5211DW1T1 Series TYPICAL ELECTRICAL CHARACTERISTICS -- MUN5214DW1T1 1 IC/IB = 10 TA = -25C 25C 75C hFE, DC CURRENT GAIN (NORMALIZED) 300 250 200 150 100 50 0 1 2 4 6 8 10 15 20 40 50 60 70 80 IC, COLLECTOR CURRENT (mA) 90 100 VCE = 10 TA = 75C 25C -25C VCE(sat) , COLLECTOR VOLTAGE (VOLTS) 0.1 0.01 0.001 0 20 40 60 IC, COLLECTOR CURRENT (mA) 80 Figure 17. VCE(sat) versus IC Figure 18. DC Current Gain 4 3.5 Cob , CAPACITANCE (pF) 3 2.5 2 1.5 1 0.5 0 0 2 4 6 8 10 15 20 25 30 35 VR, REVERSE BIAS VOLTAGE (VOLTS) 40 45 50 f = 1 MHz lE = 0 V TA = 25C 100 TA = 75C IC, COLLECTOR CURRENT (mA) 25C -25C 10 VO = 5 V 1 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) 8 10 Figure 19. Output Capacitance Figure 20. Output Current versus Input Voltage 10 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) TA = -25C 25C 75C 1 0.1 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 21. Input Voltage versus Output Current http://onsemi.com 8 MUN5211DW1T1 Series TYPICAL ELECTRICAL CHARACTERISTICS -- MUN5215DW1T1 VCE(sat), COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 hFE, DC CURRENT GAIN 1000 75C 75C TA = -25C 25C VCE = 10 V 0.1 -25C 0.01 100 25C 10 0.001 0 20 40 30 10 IC, COLLECTOR CURRENT (mA) 50 1 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 22. VCE(sat) versus IC Figure 23. DC Current Gain 4.5 IC, COLLECTOR CURRENT (mA) 4 Cob, CAPACITANCE (pF) 3.5 3 2.5 2 1.5 1 0.5 0 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 f = 1 MHz IE = 0 V TA = 25C 100 75C 10 25C 1 TA = -25C 0.1 0.01 VO = 5 V 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) 9 10 0.001 Figure 24. Output Capacitance Figure 25. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) TA = -25C 1 25C 75C VO = 0.2 V 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) 50 Figure 26. Input Voltage versus Output Current http://onsemi.com 9 MUN5211DW1T1 Series TYPICAL ELECTRICAL CHARACTERISTICS -- MUN5216DW1T1 VCE(sat), COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 hFE, DC CURRENT GAIN TA = -25C 100 25C 1000 75C VCE = 10 V 0.1 -25C 0.01 75C 25C 10 0.001 0 20 40 30 10 IC, COLLECTOR CURRENT (mA) 50 1 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 27. VCE(sat) versus IC Figure 28. DC Current Gain 4.5 4 Cob, CAPACITANCE (pF) 3.5 3 2.5 2 1.5 1 0.5 0 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 f = 1 MHz IE = 0 V TA = 25C IC, COLLECTOR CURRENT (mA) 100 75C 25C TA = -25C 10 1 0.1 0.01 VO = 5 V 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) 9 10 0.001 Figure 29. Output Capacitance Figure 30. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) TA = -25C 1 25C 75C VO = 0.2 V 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) 50 Figure 31. Input Voltage versus Output Current http://onsemi.com 10 MUN5211DW1T1 Series TYPICAL ELECTRICAL CHARACTERISTICS -- MUN5230DW1T1 VCE(sat), COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 75C 0.1 -25C 25C hFE, DC CURRENT GAIN 100 75C 10 25C TA = -25C VCE = 10 V 1 0.01 0.001 0 10 20 40 30 IC, COLLECTOR CURRENT (mA) 50 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 32. VCE(sat) versus IC Figure 33. DC Current Gain 4.5 4 Cob, CAPACITANCE (pF) 3.5 3 2.5 2 1.5 1 0.5 0 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 f = 1 MHz IE = 0 V TA = 25C IC, COLLECTOR CURRENT (mA) 100 75C 10 25C 1 TA = -25C 0.1 0.01 VO = 5 V 0 1 2 7 8 3 4 5 6 Vin, INPUT VOLTAGE (VOLTS) 9 10 0.001 Figure 34. Output Capacitance Figure 35. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) TA = -25C 1 75C 25C VO = 0.2 V 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) 50 Figure 36. Input Voltage versus Output Current http://onsemi.com 11 MUN5211DW1T1 Series TYPICAL ELECTRICAL CHARACTERISTICS -- MUN5231DW1T1 VCE(sat), COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 hFE, DC CURRENT GAIN 100 0.1 -25C 0.01 25C 75C 75C 10 25C TA = -25C VCE = 10 V 1 1 10 IC, COLLECTOR CURRENT (mA) 100 0.001 0 10 20 40 30 IC, COLLECTOR CURRENT (mA) 50 Figure 37. VCE(sat) versus IC Figure 38. DC Current Gain 4.5 4 Cob, CAPACITANCE (pF) 3.5 3 2.5 2 1.5 1 0.5 0 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 IC, COLLECTOR CURRENT (mA) f = 1 MHz IE = 0 V TA = 25C 100 75C 10 25C 1 TA = -25C 0.1 0.01 VO = 5 V 0 1 2 7 8 3 4 5 6 Vin, INPUT VOLTAGE (VOLTS) 9 10 0.001 Figure 39. Output Capacitance Figure 40. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) TA = -25C 1 75C 25C VO = 0.2 V 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) 50 Figure 41. Input Voltage versus Output Current http://onsemi.com 12 MUN5211DW1T1 Series TYPICAL ELECTRICAL CHARACTERISTICS -- MUN5232DW1T1 VCE(sat), COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 hFE, DC CURRENT GAIN 75C 1000 VCE = 10 V 0.1 -25C 0.01 75C 100 25C 10 TA = -25C 25C 0.001 0 10 20 40 30 IC, COLLECTOR CURRENT (mA) 50 1 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 42. VCE(sat) versus IC Figure 43. DC Current Gain 6 5 4 3 2 1 0 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 f = 1 MHz IE = 0 V TA = 25C IC, COLLECTOR CURRENT (mA) 100 75C 10 25C Cob, CAPACITANCE (pF) 1 TA = -25C 0.1 0.01 VO = 5 V 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) 9 10 0.001 Figure 44. Output Capacitance Figure 45. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) TA = -25C 1 75C 25C VO = 0.2 V 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) 50 Figure 46. Input Voltage versus Output Current http://onsemi.com 13 MUN5211DW1T1 Series TYPICAL ELECTRICAL CHARACTERISTICS -- MUN5233DW1T1 VCE(sat), COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 hFE, DC CURRENT GAIN 75C 100 TA = -25C 25C 1000 VCE = 10 V 0.1 75C -25C 25C 0.01 10 0.001 0 5 10 15 25 20 IC, COLLECTOR CURRENT (mA) 30 1 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 47. VCE(sat) versus IC Figure 48. DC Current Gain 4 3.5 Cob, CAPACITANCE (pF) 3 2.5 2 1.5 1 0.5 0 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 f = 1 MHz IE = 0 V TA = 25C IC, COLLECTOR CURRENT (mA) 100 75C 10 25C 1 TA = -25C 0.1 0.01 VO = 5 V 0 1 2 7 8 3 4 5 6 Vin, INPUT VOLTAGE (VOLTS) 9 10 0.001 Figure 49. Output Capacitance Figure 50. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) TA = -25C 1 75C 25C VO = 0.2 V 0.1 0 5 10 15 20 IC, COLLECTOR CURRENT (mA) 25 Figure 51. Input Voltage versus Output Current http://onsemi.com 14 MUN5211DW1T1 Series TYPICAL ELECTRICAL CHARACTERISTICS -- MUN5234DW1T1 VCE(sat), COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 hFE, DC CURRENT GAIN 75C 100 TA = -25C 25C 1000 VCE = 10 V 0.1 75C -25C 0.01 25C 10 0.001 0 5 10 15 25 20 IC, COLLECTOR CURRENT (mA) 30 1 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 52. VCE(sat) versus IC Figure 53. DC Current Gain TBD IC, COLLECTOR CURRENT (mA) Cob, CAPACITANCE (pF) TBD VR, REVERSE BIAS VOLTAGE (VOLTS) Vin, INPUT VOLTAGE (VOLTS) Figure 54. Output Capacitance Figure 55. Output Current versus Input Voltage Vin, INPUT VOLTAGE (VOLTS) TBD IC, COLLECTOR CURRENT (mA) Figure 56. Input Voltage versus Output Current http://onsemi.com 15 MUN5211DW1T1 Series TYPICAL ELECTRICAL CHARACTERISTICS -- MUN5235DW1T1 VCE(sat), COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 75C 75C 0.1 -25C 0.01 25C hFE, DC CURRENT GAIN 100 1000 VCE = 10 V TA = -25C 25C 10 0.001 0 10 20 40 30 IC, COLLECTOR CURRENT (mA) 50 1 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 57. VCE(sat) versus IC Figure 58. DC Current Gain 4.5 4 Cob, CAPACITANCE (pF) 3.5 3 2.5 2 1.5 1 0.5 0 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 f = 1 MHz IE = 0 V TA = 25C IC, COLLECTOR CURRENT (mA) 100 25C 10 75C 1 TA = -25C 0.1 0.01 VO = 5 V 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) 9 10 0.001 Figure 59. Output Capacitance Figure 60. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) 75C 1 25C TA = -25C VO = 0.2 V 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) 50 Figure 61. Input Voltage versus Output Current http://onsemi.com 16 MUN5211DW1T1 Series TYPICAL ELECTRICAL CHARACTERISTICS -- MUN5236DW1T1 VCE(sat), COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 -25C hFE, DC CURRENT GAIN 75C 0.1 25C 75C 100 1000 VCE = 10 V TA = -25C 25C 0.01 10 0.001 0 10 20 40 30 IC, COLLECTOR CURRENT (mA) 50 1 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 62. VCE(sat) versus IC Figure 63. DC Current Gain 5 4.5 Cob, CAPACITANCE (pF) 4 3.5 3 2.5 2 1.5 1 0.5 0 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 f = 1 MHz IE = 0 V TA = 25C IC, COLLECTOR CURRENT (mA) 100 75C 10 1 TA = -25C 25C 0.1 0.01 VO = 5 V 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) 9 10 0.001 Figure 64. Output Capacitance Figure 65. Output Current versus Input Voltage 100 Vin, INPUT VOLTAGE (VOLTS) TA = -25C 10 75C 1 25C VO = 0.2 V 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) 50 Figure 66. Input Voltage versus Output Current http://onsemi.com 17 MUN5211DW1T1 Series TYPICAL ELECTRICAL CHARACTERISTICS -- MUN5237DW1T1 VCE(sat), COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 -25C 1000 VCE = 10 V hFE, DC CURRENT GAIN 75C 25C 75C 100 TA = -25C 25C 0.1 0.01 10 0.001 0 10 20 40 30 IC, COLLECTOR CURRENT (mA) 50 1 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 67. VCE(sat) versus IC Figure 68. DC Current Gain 5 4.5 Cob, CAPACITANCE (pF) 4 3.5 3 2.5 2 1.5 1 0.5 0 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 f = 1 MHz IE = 0 V TA = 25C IC, COLLECTOR CURRENT (mA) 100 75C 10 25C TA = -25C 0.1 1 0.01 VO = 5 V 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) 9 10 0.001 Figure 69. Output Capacitance Figure 70. Output Current versus Input Voltage 100 Vin, INPUT VOLTAGE (VOLTS) 10 TA = -25C 75C 1 25C VO = 0.2 V 0.1 0 40 10 20 30 IC, COLLECTOR CURRENT (mA) 50 Figure 71. Input Voltage versus Output Current http://onsemi.com 18 MUN5211DW1T1 Series PACKAGE DIMENSIONS SC-88 (SOT-363) CASE 419B-02 ISSUE T G NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419B-01 OBSOLETE, NEW STANDARD 419B-02. 4 INCHES MIN MAX 0.071 0.087 0.045 0.053 0.031 0.043 0.004 0.012 0.026 BSC --- 0.004 0.004 0.010 0.004 0.012 0.008 REF 0.079 0.087 EMITTER 2 BASE 2 COLLECTOR 1 EMITTER 1 BASE 1 COLLECTOR 2 MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.80 1.10 0.10 0.30 0.65 BSC --- 0.10 0.10 0.25 0.10 0.30 0.20 REF 2.00 2.20 A 6 5 S 1 2 3 -B- D 6 PL 0.2 (0.008) M B N M DIM A B C D G H J K N S J C STYLE 1: PIN 1. 2. 3. 4. 5. 6. H K SOLDERING FOOTPRINT* 0.50 0.0197 0.65 0.025 0.65 0.025 0.40 0.0157 1.9 0.0748 SCALE 20:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 19 MUN5211DW1T1 Series ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Phone: 81-3-5773-3850 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 20 MUN5211DW1T1/D |
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